TYPE | DESCRIPTION |
---|
Number of Pins | 3 Pin |
Case/Package | DPAK |
Drain to Source Resistance (on) (Rds) | 80.0 mΩ |
Polarity | N-Channel |
Power Dissipation | 30.0 W |
Drain to Source Voltage (Vds) | 60.0 V |
Continuous Drain Current (Ids) | 12.0 A |
TYPE | DESCRIPTION |
---|
Product Lifecycle Status | Pre-Release |
Packaging | Cut Tape (CT) |
The STD12NF06L is a 60V N-channel Power MOSFET developed using unique STripFET process, which is specifically designed to minimize input capacitance and gate charge. This renders the MOSFET suitable for use as primary switch in advanced high efficiency isolated DC-DC converters for telecom and computer applications and applications with low gate charge driving requirements.
● Exceptional dv/dt capability
● Low gate charge
● High peak power
● High ruggedness capability
ST Microelectronics
14 Pages / 0.3 MByte
ST Microelectronics
16 Pages / 0.82 MByte
ST Microelectronics
N-CHANNEL 60V - 0.08Ω - 12A IPAK/DPAK STRIPFET II POWER MOSFET
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