| TYPE | DESCRIPTION |
|---|
| Mounting Style | Surface Mount |
| Number of Pins | 3 Pin |
| Case/Package | TO-252-3 |
| Polarity | N-Channel |
| Drain to Source Voltage (Vds) | 600V |
| Continuous Drain Current (Ids) | 10A |
| TYPE | DESCRIPTION |
|---|
| Product Lifecycle Status | Active |
| Packaging | Cut Tape (CT) |
Description
●The device is an N-channel FDmesh™ II Power MOSFET that belongs to the second generation of MDmesh™ technology. This revolutionary Power MOSFET associates a new vertical structure to the company"s strip layout and associates all advantages of reduced on resistance and fast switching with an intrinsic fast recovery body diode.It is therefore strongly recommended for bridge topologies, in particular
●■ The worldwide best RDS(on)
● area amongst the fast recovery diode devices
●■ 100% avalanche tested
●■ Low input capacitance and gate charge
●■ Low gate input resistance
●■ Extremely high dv/dt and avalanche capabilities
ST Microelectronics
19 Pages / 0.74 MByte
ST Microelectronics
N-channel 600V - 0.37Ω - 10A - TO-220 - TO-220FP- IPAK - DPAK Second generation MDmesh™ Power MOSFET
ST Microelectronics
N-channel 600V - 0.37Ω - 10A - TO-220 - TO-220FP- IPAK - DPAK Second generation MDmesh™ Power MOSFET
ST Microelectronics
N-channel 600V, 0.37Ω, 10A MDmesh(TM) II Power MOSFET in a DPAK package
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