| TYPE | DESCRIPTION |
|---|
| Mounting Style | Surface Mount |
| Number of Pins | 3 Pin |
| Case/Package | TO-252 |
| Polarity | N-Channel |
| TYPE | DESCRIPTION |
|---|
| Product Lifecycle Status | Active |
| Packaging | Reel |
The STD10NM60N is a MDmesh™ II N-channel Power MOSFET features low input capacitance and gate charge. This Power MOSFET is developed using the second generation of MDmesh™ technology. This revolutionary Power MOSFET associates a vertical structure to the company"s strip layout to yield one of the world"s lowest ON-resistance. It is therefore suitable for the most demanding high efficiency converters.
● 100% Avalanche tested
● Low gate input resistance
ST Microelectronics
17 Pages / 0.88 MByte
ST Microelectronics
3 Pages / 0.31 MByte
ST Microelectronics
27 Pages / 1.22 MByte
ST Microelectronics
5 Pages / 0.04 MByte
ST Microelectronics
N-channel 600V, 0.53Ω, 10A, DPAK, TO-220, TO-220FP, IPAK MDmesh™ II Power MOSFET
ST Microelectronics
STMICROELECTRONICS STD10NM60ND Power MOSFET, N Channel, 8A, 600V, 0.57Ω, 10V, 4V
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