| TYPE | DESCRIPTION |
|---|
| Mounting Style | Surface Mount |
| Number of Pins | 3 Pin |
| Voltage Rating (DC) | 100 V |
| Current Rating | 13.0 A |
| Case/Package | TO-252 |
| Drain to Source Resistance (on) (Rds) | 115 mΩ |
| Polarity | N-Channel |
| Power Dissipation | 50.0 W |
| Drain to Source Voltage (Vds) | 100 V |
| Breakdown Voltage (Drain to Source) | 100 V |
| Breakdown Voltage (Gate to Source) | -20.0 V to 20.0 V |
| Continuous Drain Current (Ids) | 13.0 A |
| Rise Time | 25.0 ns |
| TYPE | DESCRIPTION |
|---|
| Product Lifecycle Status | Active |
| Packaging | Cut Tape (CT) |
The STD10NF10T4 is a STripFET™ II N-channel Power MOSFET specifically designed to minimize input capacitance and gate charge. It is suitable as primary switch in advanced high-efficiency, high-frequency isolated DC-to-DC converters for telecom and computer applications. It is also intended for any applications with low gate drive requirements.
● Exceptional dV/dt capability
● Application oriented characterization
● -55 to 175°C Operating junction temperature range
ST Microelectronics
14 Pages / 0.44 MByte
ST Microelectronics
1 Pages / 0.42 MByte
ST Microelectronics
1 Pages / 0.13 MByte
ST Microelectronics
N-CHANNEL 100V - 0.115Ω - 13A IPAK/DPAK LOW GATE CHARGE STRIPFET II POWER MOSFET
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