| TYPE | DESCRIPTION |
|---|
| Mounting Style | Surface Mount |
| Number of Pins | 3 Pin |
| Voltage Rating (DC) | 650 V |
| Current Rating | 5.00 A |
| Case/Package | TO-263 |
| Drain to Source Resistance (on) (Rds) | 900 mΩ |
| Polarity | N-Channel |
| Power Dissipation | 100 W |
| Gate Charge | 18.0 nC |
| Drain to Source Voltage (Vds) | 650 V |
| Breakdown Voltage (Drain to Source) | 600 V |
| Breakdown Voltage (Gate to Source) | -30.0 V to 30.0 V |
| Continuous Drain Current (Ids) | 5.00 A |
| Rise Time | 10.0 ns |
| TYPE | DESCRIPTION |
|---|
| Product Lifecycle Status | Not Recommended for New Designs |
| Packaging | Reel |
The STB8NM60T4 is a MDmesh™ N-channel Power MOSFET features low input capacitance and gate charge. The MDmesh™ is a new revolutionary Power MOSFET technology that associates the multiple drain process with the company"s PowerMESH™ horizontal layout. The resulting product has an outstanding low ON-resistance, impressively high dV/dt and excellent avalanche characteristics. The adoption of the company"s proprietary strip technique yields overall dynamic performance that is significantly better than that of similar competition"s products.
● 100% Avalanche tested
● High dV/dt and avalanche capabilities
● Low gate input resistance
ST Microelectronics
1 Pages / 0.15 MByte
ST Microelectronics
10 Pages / 0.75 MByte
ST Microelectronics
1 Pages / 0.13 MByte
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