| TYPE | DESCRIPTION |
|---|
| Mounting Style | Surface Mount |
| Number of Pins | 3 Pin |
| Voltage Rating (DC) | 75.0 V |
| Current Rating | 75.0 A |
| Case/Package | TO-263 |
| Drain to Source Resistance (on) (Rds) | 10.0 mΩ |
| Polarity | N-Channel |
| Power Dissipation | 300 W |
| Drain to Source Voltage (Vds) | 75.0 V |
| Breakdown Voltage (Drain to Source) | 75.0 V |
| Breakdown Voltage (Gate to Source) | -15.0 V to 15.0 V |
| Continuous Drain Current (Ids) | 75.0 A |
| Rise Time | 150 ns |
| TYPE | DESCRIPTION |
|---|
| Product Lifecycle Status | Active |
| Packaging | Cut Tape (CT) |
The STB75NF75LT4 is a STripFET™ II N-channel Power MOSFET specifically designed to minimize input capacitance and gate charge. It is suitable as primary switch in advanced high-efficiency, high-frequency isolated DC-to-DC converters for telecom and computer applications. It is also intended for any applications with low gate drive requirements.
● Exceptional dV/dt capability
● 100% Avalanche tested
● Low threshold drive
● -55 to 175°C Operating junction temperature
ST Microelectronics
13 Pages / 0.32 MByte
ST Microelectronics
5 Pages / 0.04 MByte
ST Microelectronics
1 Pages / 0.12 MByte
ST Microelectronics
STMICROELECTRONICS STB75NF75LT4 MOSFET Transistor, N Channel, 37.5A, 75V, 0.009Ω, 15V, 2.5V
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