| TYPE | DESCRIPTION |
|---|
| Mounting Style | Surface Mount |
| Number of Pins | 3 Pin |
| Voltage Rating (DC) | 60.0 V |
| Current Rating | 50.0 A |
| Case/Package | TO-263 |
| Drain to Source Resistance (on) (Rds) | 18.0 mΩ |
| Polarity | N-Channel |
| Power Dissipation | 110 W |
| Drain to Source Voltage (Vds) | 60.0 V |
| Breakdown Voltage (Drain to Source) | 60.0 V |
| Breakdown Voltage (Gate to Source) | -20.0 V to 20.0 V |
| Continuous Drain Current (Ids) | 50.0 A |
| TYPE | DESCRIPTION |
|---|
| Product Lifecycle Status | Active |
| Packaging | Cut Tape (CT) |
The STB55NF06T4 is a STripFET™ II N-channel Power MOSFET specifically designed to minimize input capacitance and gate charge. The device is suitable for use as primary switch in advanced high-efficiency isolated DCDC converters for telecom and computer applications and applications with low gate charge driving requirements.
● 100% Avalanche tested
● Exceptional dV/dt capability
● -55 to 175°C Operating junction temperature range
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N-CHANNEL 60V - 0.015Ω - 50A TO-220/TO-220FP/I²PAK/D²PAKSTripFET™ II POWER MOSFET
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N-CHANNEL 60V - 0.014Ω - 55A TO-220/FP/D2PAK/I2PAK STripFET⑩II POWER MOSFET
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