| TYPE | DESCRIPTION |
|---|
| Mounting Style | Surface Mount |
| Number of Pins | 3 Pin |
| Voltage Rating (DC) | 60.0 V |
| Current Rating | 55.0 A |
| Case/Package | TO-263 |
| Drain to Source Resistance (on) (Rds) | 14.0 mΩ |
| Polarity | N-Channel |
| Power Dissipation | 95.0 W |
| Drain to Source Voltage (Vds) | 30.0 V |
| Breakdown Voltage (Drain to Source) | 60.0 V |
| Breakdown Voltage (Gate to Source) | -16.0 V to 16.0 V |
| Continuous Drain Current (Ids) | 220 A |
| TYPE | DESCRIPTION |
|---|
| Product Lifecycle Status | Active |
| Packaging | Cut Tape (CT) |
The STB55NF06LT4 is a STripFET™ II N-channel Power MOSFET developed using STMicroelectronics unique Single Feature Size™ strip-based process. The device has extremely high packing density for low ON-resistance, rugged avalanche characteristics and less critical alignment steps therefore a remarkable manufacturing reproducibility.
● Exceptional dV/dt capability
● 100% Avalanche tested
● Application oriented characterization
● -55 to 175°C Operating junction temperature
ST Microelectronics
15 Pages / 0.32 MByte
ST Microelectronics
N-CHANNEL 60V - 0.015Ω - 50A TO-220/TO-220FP/I²PAK/D²PAKSTripFET™ II POWER MOSFET
ST Microelectronics
N-CHANNEL 60V - 0.014Ω - 55A TO-220/FP/D2PAK/I2PAK STripFET⑩II POWER MOSFET
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