| TYPE | DESCRIPTION |
|---|
| Mounting Style | Surface Mount |
| Number of Pins | 3 Pin |
| Voltage Rating (DC) | 600 V |
| Current Rating | 4.00 A |
| Case/Package | TO-263 |
| Drain to Source Resistance (on) (Rds) | 2.00 Ω |
| Polarity | N-Channel |
| Power Dissipation | 70.0 W |
| Drain to Source Voltage (Vds) | 600 V |
| Breakdown Voltage (Drain to Source) | 600 V |
| Breakdown Voltage (Gate to Source) | -30.0 V to 30.0 V |
| Continuous Drain Current (Ids) | 2.00 A |
| Rise Time | 9.50 ns |
| TYPE | DESCRIPTION |
|---|
| Product Lifecycle Status | Active |
| Packaging | Cut Tape (CT) |
The STB4NK60ZT4 is a 600V N-channel Zener-protected Power MOSFET developed using SuperMESH™ technology, achieved through optimization of well established strip-based PowerMESH™ layout. In addition to a significant reduction in on resistance, the MOSFET is designed to ensure a high level of dv/dt capability for the most demanding applications.
● 100% Avalanche tested
● Very low intrinsic capacitance
● Zener-protected
ST Microelectronics
28 Pages / 0.94 MByte
ST Microelectronics
26 Pages / 1.04 MByte
ST Microelectronics
1 Pages / 0.13 MByte
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