| TYPE | DESCRIPTION |
|---|
| Mounting Style | Surface Mount |
| Number of Pins | 3 Pin |
| Case/Package | TO-263 |
| Polarity | N-Channel |
| Drain to Source Voltage (Vds) | 600V |
| Continuous Drain Current (Ids) | 29A |
| TYPE | DESCRIPTION |
|---|
| Product Lifecycle Status | Active |
| Packaging | Reel |
The STB34NM60ND is a FDmesh™ II N-channel Power MOSFET features low input capacitance and gate charge. This FDmesh™ V Power MOSFET produced using ST"s MDmesh™ V technology, which is based on an innovative proprietary vertical structure. The resulting product boasts an extremely low ON-resistance that is unrivalled among silicon-based Power MOSFET and superior switching performance with intrinsic fast-recovery body diode.
● The worldwide best RDS (ON) area amongst the fast recovery diode device
● 100% Avalanche tested
● Low gate input resistance
● The world"s best RDS (ON) in TO-220 amongst the fast recovery diode devices
● Extremely high dV/dt and avalanche capabilities
ST Microelectronics
22 Pages / 1.23 MByte
ST Microelectronics
3 Pages / 0.31 MByte
ST Microelectronics
10 Pages / 0.75 MByte
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