| TYPE | DESCRIPTION |
|---|
| Mounting Style | Surface Mount |
| Number of Pins | 3 Pin |
| Case/Package | TO-263 |
| Polarity | N-Channel |
| Drain to Source Voltage (Vds) | 650V |
| Continuous Drain Current (Ids) | 24A |
| TYPE | DESCRIPTION |
|---|
| Product Lifecycle Status | Active |
| Packaging | Reel |
The STB32N65M5 is a MDmesh™ V N-channel Power MOSFET features excellent switching performance. This MDmesh™ V Power MOSFET based on an innovative proprietary vertical process technology, which is combined with STMicroelectronics" well-known PowerMESH™ horizontal layout structure. The resulting product has extremely low ON-resistance, which is unmatched among silicon based Power MOSFET, making it especially suitable for applications which require superior power density and outstanding efficiency.
● Worldwide best RDS (ON) area
● Higher VDSS rating
● High dV/dt capability
● 100% Avalanche tested
● Easy to drive
ST Microelectronics
22 Pages / 1.24 MByte
ST Microelectronics
3 Pages / 0.31 MByte
ST Microelectronics
10 Pages / 0.75 MByte
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