| TYPE | DESCRIPTION |
|---|
| Mounting Style | Surface Mount |
| Number of Pins | 3 Pin |
| Voltage Rating (DC) | 100 V |
| Current Rating | 35.0 A |
| Case/Package | TO-263 |
| Drain to Source Resistance (on) (Rds) | 38.0 mΩ |
| Polarity | N-Channel |
| Power Dissipation | 115 W |
| Drain to Source Voltage (Vds) | 100 V |
| Breakdown Voltage (Drain to Source) | 100 V |
| Breakdown Voltage (Gate to Source) | -20.0 V to 20.0 V |
| Continuous Drain Current (Ids) | 15.0 A |
| TYPE | DESCRIPTION |
|---|
| Product Lifecycle Status | Active |
| Packaging | Cut Tape (CT) |
The STB30NF10T4 is a STripFET™ II N-channel Power MOSFET with low gate charge. The device is the latest development of STMicroelectronics unique Single Feature Size™ strip-based process. It has extremely high packing density for low ON-resistance, rugged avalanche characteristics and less critical alignment steps therefore a remarkable manufacturing reproducibility.
● Exceptional dV/dt capability
● 100% Avalanche tested
● Application oriented characterization
● -55 to 175°C Operating junction temperature range
ST Microelectronics
16 Pages / 0.49 MByte
ST Microelectronics
5 Pages / 0.04 MByte
ST Microelectronics
N-CHANNEL 100V 0.038Ω 35A TO-220/TO-220FP/D2PAK LOW GATE CHARGE STRIPFET POWER II MOSFET
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