| TYPE | DESCRIPTION |
|---|
| Mounting Style | Surface Mount |
| Number of Pins | 3 Pin |
| Case/Package | TO-263 |
| Polarity | N-Channel |
| Power Dissipation | 150 W |
| Drain to Source Voltage (Vds) | 600V |
| Continuous Drain Current (Ids) | 10.0 A |
| TYPE | DESCRIPTION |
|---|
| Product Lifecycle Status | Active |
| Packaging | Cut Tape (CT) |
The STB23NM60ND is a FDmesh™ II N-channel Power MOSFET features low input capacitance and gate charge. This FDmesh™ II Power MOSFET with intrinsic fast-recovery body diode is produced using the second generation of MDmesh™ technology. Utilizing a new strip-layout vertical structure, this revolutionary device features extremely low ON-resistance and superior switching performance. It is ideal for bridge topologies and ZVS phase-shift converters.
● The worldwide best RDS (ON) area amongst the fast recovery diode device
● 100% Avalanche tested
● Low gate input resistance
● High dV/dt and avalanche capabilities
ST Microelectronics
18 Pages / 0.79 MByte
ST Microelectronics
22 Pages / 1.07 MByte
ST Microelectronics
Trans MOSFET N-CH 600V 19A 3Pin(2+Tab) D2PAK T/R
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