| TYPE | DESCRIPTION |
|---|
| Mounting Style | Surface Mount |
| Number of Pins | 3 Pin |
| Case/Package | TO-263 |
| Polarity | N-Channel |
| Drain to Source Voltage (Vds) | 500V |
| Continuous Drain Current (Ids) | 12A |
| TYPE | DESCRIPTION |
|---|
| Product Lifecycle Status | Active |
| Packaging | Reel |
The STB14NM50N is a MDmesh™ II N-channel Power MOSFET developed using the second generation of MDmesh™ technology. The device associates a vertical structure with strip layout yield to lowest ON-resistance and gate charge. It is suitable for the most demanding high efficiency converters.
● 100% Avalanche tested
● Low input capacitance and gate charge
● Low gate input resistance
ST Microelectronics
22 Pages / 1.25 MByte
ST Microelectronics
3 Pages / 0.31 MByte
ST Microelectronics
26 Pages / 1.27 MByte
ST Microelectronics
10 Pages / 0.75 MByte
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