TYPE | DESCRIPTION |
---|
Mounting Style | Surface Mount |
Number of Pins | 3 Pin |
Case/Package | D2PAK |
Polarity | N-Channel |
Drain to Source Voltage (Vds) | 650V |
Continuous Drain Current (Ids) | 11A |
TYPE | DESCRIPTION |
---|
Product Lifecycle Status | Active |
Packaging | Reel |
The STB13NM60N is a MDmesh™ II N-channel Power MOSFET features low input capacitance and gate charge. This revolutionary Power MOSFET associates a vertical structure to the company"s strip layout to yield one of the world"s lowest ON-resistance. It is therefore suitable for the most demanding high efficiency converters.
● Low gate input resistance
● 100% Avalanche tested
ST Microelectronics
30 Pages / 1.38 MByte
ST Microelectronics
3 Pages / 0.31 MByte
ST Microelectronics
24 Pages / 1.12 MByte
ST Microelectronics
10 Pages / 0.75 MByte
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