| TYPE | DESCRIPTION |
|---|
| Mounting Style | Surface Mount |
| Number of Pins | 3 Pin |
| Voltage Rating (DC) | 550 V |
| Current Rating | 12.0 A |
| Case/Package | D2PAK |
| Drain to Source Resistance (on) (Rds) | 350 mΩ |
| Polarity | N-Channel |
| Power Dissipation | 160 W |
| Input Capacitance | 1.00 nF |
| Gate Charge | 39.0 nC |
| Drain to Source Voltage (Vds) | 500 V |
| Breakdown Voltage (Drain to Source) | 500 V |
| Breakdown Voltage (Gate to Source) | -30.0 V to 30.0 V |
| Continuous Drain Current (Ids) | 12.0 A |
| Rise Time | 10.0 ns |
| TYPE | DESCRIPTION |
|---|
| Product Lifecycle Status | Active |
| Packaging | Reel |
The STB12NM50T4 is a MDmesh™ N-channel Power MOSFET designed as MOSFET technology that associates the multiple drain process with PowerMESH™ horizontal layout. The device has an outstanding low ON-resistance, impressively high dV/dt and excellent avalanche characteristics.
● High dV/dt and avalanche capabilities
● 100% Avalanche tested
● Low input capacitance and gate charge
● Tight process control and high manufacturing yields
● Low gate input resistance
● -65 to 150°C Operating junction temperature range
ST Microelectronics
1 Pages / 0.15 MByte
ST Microelectronics
10 Pages / 0.75 MByte
ST Microelectronics
1 Pages / 0.13 MByte
ST Microelectronics
N-CHANNEL 500V - 0.3Ω - 12A TO-220/TO-220FP/D2PAK/I2PAK MDMESH POWER MOSFET
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