| TYPE | DESCRIPTION |
|---|
| Mounting Style | Surface Mount |
| Number of Pins | 3 Pin |
| Voltage Rating (DC) | 800 V |
| Current Rating | 10.5 A |
| Case/Package | TO-263 |
| Drain to Source Resistance (on) (Rds) | 750 mΩ |
| Polarity | N-Channel |
| Power Dissipation | 190 W |
| Drain to Source Voltage (Vds) | 800 V |
| Breakdown Voltage (Drain to Source) | 800 V |
| Breakdown Voltage (Gate to Source) | -30.0 V to 30.0 V |
| Continuous Drain Current (Ids) | 10.5 A |
| Rise Time | 18.0 ns |
| TYPE | DESCRIPTION |
|---|
| Product Lifecycle Status | Active |
| Packaging | Cut Tape (CT) |
The STB12NK80ZT4 is a SuperMESH™ N-channel Power MOSFET offers Zener-protection and minimized gate charge. This SuperMESH™ technology achieved through optimization of ST"s well-established strip-based PowerMESH™ layout. In addition to a significant reduction in ON-resistance, this device is designed to ensure a high level of dV/dt capability for the most demanding applications.
● 100% Avalanche tested
● Improved ESD capability
● Very low intrinsic capacitance
● Very good manufacturing reliability
ST Microelectronics
22 Pages / 0.67 MByte
ST Microelectronics
5 Pages / 0.04 MByte
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1 Pages / 0.13 MByte
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