| TYPE | DESCRIPTION |
|---|
| Mounting Style | Surface Mount |
| Number of Pins | 3 Pin |
| Voltage Rating (DC) | 800 V |
| Current Rating | 11.0 A |
| Case/Package | TO-263 |
| Drain to Source Resistance (on) (Rds) | 400 mΩ |
| Polarity | N-Channel |
| Power Dissipation | 150 W |
| Drain to Source Voltage (Vds) | 800 V |
| Breakdown Voltage (Drain to Source) | 800 V |
| Breakdown Voltage (Gate to Source) | -30.0 V to 30.0 V |
| Continuous Drain Current (Ids) | 44.0 A |
| Rise Time | 17.0 ns |
| TYPE | DESCRIPTION |
|---|
| Product Lifecycle Status | Active |
| Packaging | Cut Tape (CT) |
The STB11NM80T4 is a MDmesh™ N-channel Power MOSFET features low input capacitance and gate charge. developed using STMicroelectronics" revolutionary MDmesh™ technology, which associates the multiple drain process with the company"s PowerMESH™ horizontal layout. This device offers extremely low ON-resistance, high dV/dt and excellent avalanche characteristics. Utilizing ST"s proprietary strip technique, this Power MOSFET boasts an overall dynamic performance which is superior to similar products on the market.
● Low gate input resistance
● Best RDS (ON) Qg in the industry
ST Microelectronics
22 Pages / 0.88 MByte
ST Microelectronics
1 Pages / 0.13 MByte
ST Microelectronics
N-channel 800V - 0.35Ω - 11A TO-220/TO-220FP/D2PAK/TO-247 Mdmesh Power MOSFET
ST Microelectronics
N-CHANNEL 800V - 0.35Ω - 11A TO-220/TO-220FP/D2PAK/TO-247 MDMESH MOSFET
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