| TYPE | DESCRIPTION |
|---|
| Mounting Style | Surface Mount |
| Number of Pins | 3 Pin |
| Case/Package | D2PAK |
| Drain to Source Resistance (on) (Rds) | 4.60 mΩ |
| Polarity | N-Channel |
| Power Dissipation | 300 W |
| Drain to Source Voltage (Vds) | 40V |
| Breakdown Voltage (Drain to Source) | 40.0 V |
| Breakdown Voltage (Gate to Source) | -20.0 V to 20.0 V |
| Continuous Drain Current (Ids) | 120 A |
| TYPE | DESCRIPTION |
|---|
| Product Lifecycle Status | Active |
| Packaging | Reel |
The STB100NF04T4 is a STripFET™ II N-channel Power MOSFET developed using STMicroelectronics unique STripFET process. It is specifically designed to minimize input capacitance and gate charge. The device is suitable for use as primary switch in advanced high-efficiency isolated DC-to-DC converters for telecom and computer applications and applications with low gate charge driving requirements.
● Standard threshold drive
● 100% Avalanche tested
● -55 to 175°C Operating junction temperature range
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