| TYPE | DESCRIPTION |
|---|
| Mounting Style | Through Hole |
| Case/Package | ISOWATT218FX-3 |
| Polarity | NPN |
| Breakdown Voltage (Collector to Emitter) | 750V |
| Continuous Collector Current | 12A |
| TYPE | DESCRIPTION |
|---|
| Product Lifecycle Status | Active |
| Packaging | Tube |
Description
●The device is manufactured using Diffused Collector in Planar technology adopting new and enhanced high voltage structure 1 (E.H.V.S.1).
●General features
●■ State-of-the-art technology:
●– Diffused collector “Enhanced generation” EHVS1
●■ More stable performances versus operating temperature variation
●■ Low base-drive requirements
●■ Tighter hFE range at operating collector current
●■ Fully insulated power package U.L. compliant
●■ In compliance with the 2002/93/EC European directive
ST Microelectronics
10 Pages / 0.18 MByte
ETC1
0-5VDC FLUSH DIAPHRAGM PRESSURE TRANSDUCER
ST Microelectronics
ISOWATT218FX NPN 750V 12A
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