ST13007DFP Datasheet PDF - ST Microelectronics

DESCRIPTION

●The device is manufactured using high voltage Multi Epitaxial Planar technology for high switching speeds and high voltage capability. It uses a Cellular Emitter structure to enhance switching speeds.

●■ IMPROVED SPECIFICATION:

●\- LOWER LEAKAGE CURRENT

●\- TIGHTER GAIN RANGE

●\- DC CURRENT GAIN PRESELECTION

●\- TIGHTER STORAGE TIME RANGE

●■ HIGH VOLTAGE CAPABILITY

●■ INTEGRATED FREE-WHEELING DIODE

●■ LOW SPREAD OF DYNAMIC PARAMETERS

●■ MINIMUM LOT-TO-LOT SPREAD FOR RELIABLE OPERATION

●■ VERY HIGH SWITCHING SPEED

●■ FULLY CHARACTERIZED AT 125 oC

●■ LARGE RBSOA

●■ FULLY INSULATED PACKAGE (U.L. COMPLIANT) FOR EASY MOUNTING

●APPLICATIONS

●■ UP TO 120W ELECTRONIC TRANSFORMERS FOR HALOGEN LAMPS

●■ SWITCH MODE POWER SUPPLIES