| TYPE | DESCRIPTION |
|---|
| Mounting Style | Through Hole |
| Number of Pins | 3 Pin |
| Voltage Rating (DC) | 650 V |
| Current Rating | 20.0 A |
| Case/Package | TO-220 |
| Polarity | N-Channel |
| Power Dissipation | 208 W |
| Input Capacitance | 3.00 nF |
| Gate Charge | 103 nC |
| Drain to Source Voltage (Vds) | 600 V |
| Continuous Drain Current (Ids) | 20.0 A |
| Rise Time | 25.0 ns |
| TYPE | DESCRIPTION |
|---|
| Product Lifecycle Status | Not Recommended for New Designs |
| Packaging | Tube |
The SPP20N60S5 is a 600V N-channel CoolMOS™ Power MOSFET with innovative high voltage technology. The CoolMOS™ MOSFET offers a significant reduction of conduction, switching and driving losses and enable high power density and efficiency for superior power conversion systems. The latest state-of-the-art generation of high voltage power MOSFETs makes AC-DC power supplies more efficient, more compact, lighter and cooler than ever before.
● Worldwide best RDS (ON) in TO-251 and TO-252
● Ultra low gate charge
● Periodic avalanche rated
● Extreme dv/dt rated
● Ultra low effective capacitances
● Improved transconductance
Infineon
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