| TYPE | DESCRIPTION |
|---|
| Mounting Style | Through Hole |
| Number of Pins | 3 Pin |
| Voltage Rating (DC) | 650 V |
| Current Rating | 7.30 A |
| Case/Package | TO-220 |
| Polarity | N-Channel |
| Power Dissipation | 83.0 W |
| Drain to Source Voltage (Vds) | 650 V |
| Continuous Drain Current (Ids) | 7.30 A |
| Rise Time | 40.0 ns |
| TYPE | DESCRIPTION |
|---|
| Product Lifecycle Status | Not Recommended for New Designs |
| Packaging | Tube |
The SPP07N60S5 is a 600V CoolMOS™ N-channel Power MOSFET features ultra-low gate current. It is suitable for general purpose applications.
● New revolutionary high voltage technology
● Extreme dV/dt rated
● Ultra low effective capacitance
● Qualified according to JEDEC for target applications
● Improved transconductance
● Innovative high voltage technology
● Worldwide best RDS (ON)
● Periodic avalanche rated
Infineon
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