| TYPE | DESCRIPTION |
|---|
| Mounting Style | Surface Mount |
| Case/Package | REEL |
| Polarity | P-Channel |
| Drain to Source Voltage (Vds) | 60V |
| Continuous Drain Current (Ids) | 8.83A |
| TYPE | DESCRIPTION |
|---|
| Product Lifecycle Status | Active |
The SPD08P06P G is an OptiMOS™ P-channel Power MOSFET consistently meets the highest quality and performance demands in key specifications for power system design such as ON-state resistance and figure of merit characteristics.
● Enhancement-mode
● Avalanche rated
● Small signal packages approved to AEC Q101
● dV/dt Rated
● Qualified according to AEC-Q101
● Green device
Infineon
9 Pages / 0.58 MByte
Infineon
2 Pages / 0.02 MByte
Infineon
Power Field-Effect Transistor, 8.8A I(D), 60V, 0.3Ω, 1Element, P-Channel, Silicon, Metal-oxide Semiconductor FET, TO-252, ROHS COMPLIANT, TO-252, 3Pin
Infineon
Trans MOSFET P-CH 60V 8.83A 3Pin(2+Tab) TO-252
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