| TYPE | DESCRIPTION |
|---|
| Mounting Style | Through Hole |
| Number of Pins | 3 Pin |
| Voltage Rating (DC) | -60.0 V |
| Current Rating | -80.0 A |
| Case/Package | TO-263 |
| Polarity | P-Channel |
| Input Capacitance | 5.03 nF |
| Gate Charge | 173 nC |
| Drain to Source Voltage (Vds) | 60.0 V |
| Continuous Drain Current (Ids) | 80.0 A |
The SPB80P06P G is a -60V P-channel Power MOSFET that consistently meets highest quality and performance demands in key specifications for power system design such as on-state resistance and Figure of Merit characteristics.
● Enhancement mode
● Avalanche rated
● dv/dt Rated
● AEC-Q101 qualified
Infineon
11 Pages / 0.59 MByte
Infineon
11 Pages / 0.5 MByte
Infineon
Trans MOSFET P-CH 60V 80A 3Pin(2+Tab) TO-263
Infineon
Trans MOSFET P-CH 60V 80A 3Pin(2+Tab) TO-263
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