| TYPE | DESCRIPTION |
|---|
| Mounting Style | Through Hole |
| Number of Pins | 3 Pin |
| Voltage Rating (DC) | 800 V |
| Current Rating | 2.00 A |
| Case/Package | TO-220 |
| Polarity | N-Channel |
| Power Dissipation | 30.5 W |
| Input Capacitance | 290 pF |
| Gate Charge | 12.0 nC |
| Drain to Source Voltage (Vds) | 800 V |
| Continuous Drain Current (Ids) | 2.00 A |
| TYPE | DESCRIPTION |
|---|
| Packaging | Tube |
The SPA02N80C3 is a 800V CoolMOS™ N-channel Power MOSFET features ultra-low gate charge. It is designed for high DC bulk voltage and switching applications.
● New revolutionary high voltage technology
● Extreme dV/dt rated
● High peak current capability
● Qualified according to JEDEC for target applications
● Ultra low effective capacitance
● Fully isolated package
● Low specific ON-state resistance
● Field proven CoolMOS™ quality
● Very low energy storage in output capacitance (Eoss)@400V
● High efficiency and power density
● Outstanding performance
● High reliability
● Ease of use
Infineon
10 Pages / 0.43 MByte
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