● High-Bandwidth Data Path (Up to 500 MHz)
● Equivalent to IDTQS3VH384 Device
● 5-V Tolerant I/Os with Device Powered-Up or Powered-Down
● Low and Flat ON-State Resistance (ron) Characteristics Over Operating Range (ron = 4 Ω Typical)
● Rail-to-Rail Switching on Data I/O Ports
● 0- to 5-V Switching With 3.3-V VCC
● 0- to 3.3-V Switching With 2.5-V VCC
● Bidirectional Data Flow, With Near-Zero Propagation Delay
● Low Input/Output Capacitance Minimizes Loading and Signal Distortion (Cio(OFF) = 3.5 pF Typical)
● Fast Switching Frequency (fOE\ = 20 MHz Max)
● Data and Control Inputs Provide Undershoot Clamp Diodes
● Low Power Consumption (ICC = 1 mA Typical)
● VCC Operating Range From 2.3 V to 3.6 V
● Data I/Os Support 0 to 5-V Signaling Levels (0.8-V, 1.2-V, 1.5-V, 1.8-V, 2.5-V, 3.3-V, 5-V)
● Control Inputs Can be Driven by TTL or 5-V/3.3-V CMOS Outputs
● Ioff Supports Partial-Power-Down Mode Operation
● Latch-Up Performance Exceeds 100 mA Per JESD 78, Class II
● ESD Performance Tested Per JESD 22
● 2000-V Human-Body Model (A114-B, Class II)
● 1000-V Charged-Device Model (C101)
● Supports Both Digital and Analog Applications: PCI Interface, Differential Signal Interface, Memory Interleaving, Bus Isolation, Low-Distortion Signal Gating
