| TYPE | DESCRIPTION |
|---|
| Case/Package | SOT-23-3 |
| Polarity | PNP |
| Breakdown Voltage (Collector to Emitter) | 40V |
| Continuous Collector Current | 0.2A |
| TYPE | DESCRIPTION |
|---|
| Product Lifecycle Status | Active |
| Packaging | Reel |
This PNP SMMBT3906LT3G general purpose bipolar junction transistor from ON Semiconductor is perfect for a circuit requiring high-current density and can operate in a high voltage range. This bipolar junction transistor"s maximum emitter base voltage is 5 V. Its maximum power dissipation is 300 mW. In order to ensure safe delivery and enable quick mounting of this component after delivery, it will be encased in tape and reel packaging during shipment. This bipolar junction transistor has a minimum operating temperature of -55 °C and a maximum of 150 °C. It has a maximum collector emitter voltage of 40 V and a maximum emitter base voltage of 5 V.
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