| TYPE | DESCRIPTION |
|---|
| Mounting Style | Surface Mount |
| Number of Pins | 2 Pin |
| Voltage Rating (DC) | 68.0 V |
| Operating Voltage | 68.0 V |
| Case/Package | DO-214AA |
| Power Rating | 1.50 kW |
| Breakdown Voltage | 68.0 V |
| Max Repetitive Reverse Voltage (Vrrm) | 58.1V |
| Peak Pulse Power | 600W |
| TYPE | DESCRIPTION |
|---|
| Product Lifecycle Status | Active |
| Packaging | Cut Tape (CT), Tape & Reel (TR) |
| Size-Length | 4.60 mm |
| Size-Width | 3.95 mm |
| Size-Height | 2.45 mm |
The Transil SM6T series TVS Diode designed to protect sensitive equipment against electrostatic discharges according to IEC 61000-4-2 and MIL STD 883, method 3015 and electrical overstress according to IEC 61000-4-4 and 5. It is generally used against surges below 600W (10/1000µs). Planar technology makes these devices suitable for high-end equipment and SMPS where low leakage current and high junction temperature are required to provide reliability and stability over time.
● 6.8 to 220V Breakdown voltage range
● Unidirectional and bidirectional types
● 515W (10/1000µs) High power capability at Tj max
● -55 to 150°C Operating junction temperature range
ST Microelectronics
10 Pages / 0.11 MByte
ST Microelectronics
5 Pages / 0.04 MByte
ST Microelectronics
0.18 MByte
Vishay Semiconductor
Diode TVS Single Uni-Dir 58.1V 600W 2Pin SMB T/R
Vishay Semiconductor
Diode TVS Single Bi-Dir 58.1V 600W 2Pin SMB T/R
Vishay Semiconductor
Diode TVS Single Uni-Dir 58.1V 600W 2Pin SMB T/R
Vishay Semiconductor
Diode TVS Single Uni-Dir 58.1V 600W 2Pin SMB T/R
Vishay Semiconductor
Diode TVS Single Bi-Dir 58.1V 600W 2Pin SMB T/R
Vishay Semiconductor
Diode TVS Single Bi-Dir 58.1V 600W 2Pin SMB T/R
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