| TYPE | DESCRIPTION |
|---|
| Mounting Style | Surface Mount |
| Case/Package | SO |
| Drain to Source Resistance (on) (Rds) | 6.00 mΩ |
| Polarity | N-Channel |
| Power Dissipation | 2.50 W |
| Breakdown Voltage (Drain to Source) | 20.0 V |
| Breakdown Voltage (Gate to Source) | -12.0 V to 12.0 V |
| Continuous Drain Current (Ids) | 15.0 A |
| TYPE | DESCRIPTION |
|---|
| Product Lifecycle Status | Not Listed by Manufacturer |
| Packaging | Reel |
General Description
●This N-Channel 2.5V specified MOSFET is produced using Fairchild Semiconductor"s advanced PowerTrench process that has been especially tailored to minimize on-state resistance and yet maintain superior switching performance.
●Features
●• 15 A, 20 V. RDS(on)= 0.0075 Ω @ VGS= 4.5 V
● RDS(on)= 0.010 Ω @ VGS= 2.5 V.
●• Low gate charge (47nC typical).
●• Fast switching speed.
●• High performance trench technology for extremely low RDS(ON).
●• High power and current handling capability.
●Applications
●• DC/DC converter
●• Load switch
●• Battery protection
Fairchild
5 Pages / 0.18 MByte
Fairchild
Single N-Channel 2.5V Specified PowerTrench MOSFET
Vishay Semiconductor
Trans MOSFET N-CH 20V 9.5A 8Pin SOIC N T/R
Fairchild
Trans MOSFET N-CH 20V 15A 8Pin SOIC N T/R
Vishay Siliconix
Trans MOSFET N-CH 20V 9.5A 8Pin SOIC N T/R
Vishay Semiconductor
Trans MOSFET N-CH 20V 9.5A 8Pin SOIC N T/R
Vishay Semiconductor
Trans MOSFET N-CH 20V 9.5A 8Pin SOIC N
Vishay Siliconix
MOSFET N-CH 20V 9.5A 8-SOIC
Part Datasheet PDF Search
72,405,303 Parts Datasheet PDF, Update more than 5,000 PDF files ervery day.
