| TYPE | DESCRIPTION |
|---|
| Mounting Style | Surface Mount |
| Number of Pins | 8 Pin |
| Case/Package | REEL |
| Polarity | P-Channel |
| Drain to Source Voltage (Vds) | 30V |
| Continuous Drain Current (Ids) | 8A |
The SI4435DYPBF is a HEXFET® single P-channel Power MOSFET utilizes advanced processing techniques to achieve the extremely low ON-resistance per silicon area. This benefit provides the designer with an extremely efficient device for use in battery and load management applications. It has been modified through a customized lead-frame for enhanced thermal characteristics and multiple-die capability making it ideal in a variety of power applications. With these improvements, multiple devices can be used in an application with dramatically reduced board space. The package is designed for vapour phase, infrared or wave soldering techniques.
● 50°C/W Maximum junction-to-ambient
Infineon
8 Pages / 0.1 MByte
Infineon
27 Pages / 0.31 MByte
Infineon
2 Pages / 0.17 MByte
Infineon
12 Pages / 0.56 MByte
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MOSFET, Power; P-Ch; VDSS -30V; RDS(ON) 0.015Ω; ID -7A; SO-8; PD 1.5W; VGS +/-20V; -55
Vishay Siliconix
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MOSFET, Power; P-Ch; VDSS -30V; RDS(ON) 0.015Ω; ID -8A; SO-8; PD 2.5W; VGS +/-20V; -55
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