| TYPE | DESCRIPTION |
|---|
| Mounting Style | Surface Mount |
| Number of Pins | 6 Pin |
| Case/Package | SSOT |
| Drain to Source Resistance (on) (Rds) | 65.0 mΩ |
| Polarity | P-Channel |
| Power Dissipation | 1.60 W |
| Drain to Source Voltage (Vds) | -20.0 V |
| Breakdown Voltage (Gate to Source) | -8.00 V to 8.00 V |
| Continuous Drain Current (Ids) | -4.00 A |
| TYPE | DESCRIPTION |
|---|
| Product Lifecycle Status | Active |
| Packaging | Reel |
The SI3443DV is a 2.5V specified P-channel MOSFET produced using Fairchild"s advanced PowerTrench® process. It has been especially tailored to minimize ON-state resistance and yet maintain low gate charge for superior switching performance. It is designed to offer exceptional power dissipation in a very small foot-print for applications where the larger packages are impractical.
● Fast switching speed
● High performance Trench technology for extremely low RDS (ON)
● 7.2nC Typical low gate charge
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