| TYPE | DESCRIPTION |
|---|
| Mounting Style | Surface Mount |
| Number of Pins | 3 Pin |
| Case/Package | SOT-23 |
| Polarity | N-Channel |
| Power Dissipation | 830 mW |
| Drain to Source Voltage (Vds) | 30.0 V |
| Continuous Drain Current (Ids) | 1.70 A |
| TYPE | DESCRIPTION |
|---|
| Product Lifecycle Status | Active |
| Packaging | Cut Tape (CT) |
The SI2304DS,215 is a N-channel enhancement-mode FET in a plastic package using TrenchMOS™1 technology. It is suitable for use in battery management, high speed switches and low power DC to DC converter applications.
● Very fast switching
● Subminiature surface-mount package
● -65 to 150°C Junction temperature range
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