| TYPE | DESCRIPTION |
|---|
| Mounting Style | Surface Mount |
| Case/Package | SC-70-3 |
| Polarity | PNP |
| Breakdown Voltage (Collector to Emitter) | 65V |
| Continuous Collector Current | 0.1A |
| TYPE | DESCRIPTION |
|---|
| Product Lifecycle Status | Active |
| Packaging | Tape & Reel (TR) |
Jump-start your electronic circuit design with this versatile PNP SBC856BWT1G GP BJT from ON Semiconductor. This bipolar junction transistor"s maximum emitter base voltage is 5 V. Its maximum power dissipation is 150 mW. In order to ensure safe delivery and enable quick mounting of this component after delivery, it will be encased in tape and reel packaging during shipment. This bipolar junction transistor has a minimum operating temperature of -55 °C and a maximum of 150 °C. It has a maximum collector emitter voltage of 65 V and a maximum emitter base voltage of 5 V.
ON Semiconductor
6 Pages / 0.07 MByte
ON Semiconductor
6 Pages / 0.18 MByte
ON Semiconductor
7 Pages / 0.04 MByte
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