| TYPE | DESCRIPTION |
|---|
| Mounting Style | Surface Mount |
| Case/Package | SOT-23-3 |
| Halogen Free Status | Halogen Free |
| Polarity | NPN |
| Breakdown Voltage (Collector to Emitter) | 45V |
| Continuous Collector Current | 0.1A |
| TYPE | DESCRIPTION |
|---|
| Product Lifecycle Status | Active |
| Packaging | Tape & Reel (TR) |
Jump-start your electronic circuit design with this versatile NPN SBC847BLT1G GP BJT from ON Semiconductor. This bipolar junction transistor"s maximum emitter base voltage is 6 V. Its maximum power dissipation is 300 mW. This product will be shipped in tape and reel packaging so that components can be mounted effectively. It has a maximum collector emitter voltage of 45 V and a maximum emitter base voltage of 6 V. This bipolar junction transistor has a minimum operating temperature of -55 °C and a maximum of 150 °C.
ON Semiconductor
13 Pages / 0.1 MByte
ON Semiconductor
6 Pages / 0.15 MByte
ON Semiconductor
4 Pages / 0.19 MByte
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