| TYPE | DESCRIPTION |
|---|
| Mounting Style | Surface Mount |
| Case/Package | SOT-323 |
| Halogen Free Status | Halogen Free |
| Polarity | NPN |
| Breakdown Voltage (Collector to Emitter) | 65V |
| Continuous Collector Current | 0.1A |
| TYPE | DESCRIPTION |
|---|
| Product Lifecycle Status | Active |
| Packaging | Reel |
The versatility of this NPN SBC846BWT1G GP BJT from ON Semiconductor makes it capable of being use as either a switch or amplifier in your circuit. This bipolar junction transistor"s maximum emitter base voltage is 6 V. Its maximum power dissipation is 150 mW. This component will be shipped in tape and reel packaging to allow for effective mounting and safe delivery. This bipolar junction transistor has an operating temperature range of -55 °C to 150 °C. It has a maximum collector emitter voltage of 65 V and a maximum emitter base voltage of 6 V.
ON Semiconductor
13 Pages / 0.1 MByte
ON Semiconductor
4 Pages / 0.19 MByte
ON Semiconductor
7 Pages / 0.04 MByte
Part Datasheet PDF Search
72,405,303 Parts Datasheet PDF, Update more than 5,000 PDF files ervery day.
