The S70GL02GS11FHI010 is a 2GB CMOS Flash Non-Volatile Memory fabricated on 65nm MirrorBit Eclipse process technology. This device offers a fast page access time of 25ns with a corresponding random access time of 110ns. It features a write buffer that allows a maximum of 256 words/512 bytes to be programmed in one operation, resulting in faster effective programming time than standard single byte/word programming algorithms. This makes the device an ideal product for todays eMBedded applications that require higher density, better performance and lower power consumption.
● Highest address sector protected
● Versatile I/O feature - Wide I/O voltage (VIO) of 1.65V to VCC
● Sector erase - Uniform 128kB sectors
● Suspend and resume commands for program and erase operations
● Status register, data polling and ready/busy pin methods to determine device status
● Advanced sector protection - Volatile and non-volatile protection methods for each sector
● 100000 Erase cycles per sector typical
● 20 Years data retention typical
