GL-S MirrorBit® Eclipse™ Flash Non-Volatile Memory Family
●S29GL01GS 1 Gbit (128 Mbyte)
●S29GL512S 512 Mbit (64 Mbyte)
●S29GL256S 256 Mbit (32 Mbyte)
●S29GL128S 128 Mbit (16 Mbyte)
●CMOS 3.0 Volt Core with Versatile I/O
●General Description
●The Spansion® S29GL01G/512/256/128S are MirrorBit Eclipse flash products fabricated on 65 nm process technology. These devices offer a fast page access time as fast as 15 ns with a corresponding random access time asfast as 90 ns. They feature a Write Buffer that allows a maximum of 256 words/512 bytes to be programmed in one operation, resulting infaster effective
●programming time than standard programming algorithms. Thismakes these devices ideal for today’s embedded applications that require higher density, better performance and lower power consumption.
●Distinctive Characteristics
●65 nm MirrorBit Eclipse Technology
●Single supply (VCC) for read / program / erase (2.7V to 3.6V)
●Versatile I/O Feature
● – Wide I/O voltage range (VIO): 1.65V to VCC
●x16 data bus
●Asynchronous 32-byte Page read
●512-byte Programming Buffer
● – Programming in Page multiples, up to a maximum of 512 bytes
●Single word and multiple program on same word options
●Sector Erase
● – Uniform 128-kbyte sectors
●Suspend and Resume commands for Program and Erase operations
●Status Register, Data Polling, and Ready/Busy pin methods to determine device status
●Advanced Sector Protection (ASP)
● – Volatile and non-volatile protection methods for each sector
●Separate 1024-byte One Time Program (OTP) array with two lockable regions
●Common Flash Interface (CFI) parameter table
●Temperature Range
● – Industrial (-40°C to +85°C)
● – In-Cabin (-40°C to +105°C)
●100,000 erase cycles for any sector typical
●20-year data retention typical
●Packaging Options
● – 56-pin TSOP
● – 64-ball LAA Fortified BGA, 13 mm x 11 mm
● – 64-ball LAE Fortified BGA, 9 mm x 9 mm
● – 56-ball VBU Fortified BGA, 9 mm x 7 mm
