TYPE | DESCRIPTION |
---|
Mounting Style | Surface Mount |
Number of Pins | 3 Pin |
Voltage Rating (DC) | 60.0 V |
Current Rating | 2.50 A |
Case/Package | SOT-89 |
Drain to Source Resistance (on) (Rds) | 210 mΩ |
Polarity | N-Channel |
Power Dissipation | 500 mW |
Drain to Source Voltage (Vds) | 60.0 V |
Breakdown Voltage (Drain to Source) | 60.0 V |
Continuous Drain Current (Ids) | 2.50 A |
TYPE | DESCRIPTION |
---|
Packaging | Cut Tape (CT) |
The RJP020N06T100 is a N-channel silicon MOSFET offers 60V drain source voltage and ±2A continuous drain current. It is suitable for use in switching applications.
● Low ON-resistance
● 2.5V Low voltage drive
ROHM Semiconductor
0.9 MByte
ROHM Semiconductor
3 Pages / 0.05 MByte
ROHM Semiconductor
1 Pages / 0.16 MByte
ROHM Semiconductor
MPT3/SOT-89 N 60V 2A 0.21Ω
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