| TYPE | DESCRIPTION |
|---|
| Mounting Style | Through Hole |
| Number of Pins | 3 Pin |
| Voltage Rating (DC) | 60.0 V |
| Current Rating | 70.0 A |
| Case/Package | TO220AB |
| Drain to Source Resistance (on) (Rds) | 14.0 mΩ |
| Polarity | N-Channel |
| Power Dissipation | 150 W |
| Drain to Source Voltage (Vds) | 60.0 V |
| Breakdown Voltage (Drain to Source) | 60.0 V |
| Breakdown Voltage (Gate to Source) | -20.0 V to 20.0 V |
| Continuous Drain Current (Ids) | 70.0 A |
| TYPE | DESCRIPTION |
|---|
| Product Lifecycle Status | Active |
| Packaging | Tube |
The RFP70N06 is a 60V N-channel power MOSFET using MegaFET process. This process, which uses feature sizes approaching those of LSI integrated circuits gives optimum utilization of silicon, resulting in outstanding performance. The MOSFET is designed for applications such as switching regulators, switching converters, motor drivers and relay drivers. This transistor can be operated directly from integrated circuits. This product is general usage and suitable for many different applications.
● Temperature compensating PSPICE® model
● Peak current vs. pulse width curve
● UIS Rated curve
● 175°C Rated junction temperature
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