| TYPE | DESCRIPTION |
|---|
| Mounting Style | Through Hole |
| Number of Pins | 3 Pin |
| Voltage Rating (DC) | 60.0 V |
| Current Rating | 30.0 A |
| Case/Package | TO-220AB |
| Drain to Source Resistance (on) (Rds) | 47.0 mΩ |
| Polarity | N-Channel |
| Power Dissipation | 96.0 W |
| Drain to Source Voltage (Vds) | 60.0 V |
| Breakdown Voltage (Drain to Source) | 60.0 V |
| Continuous Drain Current (Ids) | 30.0 A |
| TYPE | DESCRIPTION |
|---|
| Product Lifecycle Status | Not Listed by Manufacturer |
| Packaging | Tube |
These are N-Channel power MOSFETs manufactured using the MegaFET process. This process, which uses feature sizes approaching those of LSI integrated circuits gives optimum utilization of silicon, resulting in outstanding performance. They were designed for use in applications such as switching regulators, switching converters, motor drivers and relay drivers. These transistors can be operated directly from integrated circuits.
●Features
●• 30A, 60V
●• rDS(ON) = 0.047Ω
●• 2kV ESD Protected
●• Temperature Compensating PSPICE® Model
●• Peak Current vs Pulse Width Curve
●• UIS Rating Curve
●• Related Literature
● - TB334 “Guidelines for Soldering Surface Mount Components to PC Boards”
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