| TYPE | DESCRIPTION |
|---|
| Mounting Style | Through Hole |
| Number of Pins | 3 Pin |
| Voltage Rating (DC) | 100 V |
| Current Rating | 12.0 A |
| Case/Package | TO-220AB |
| Drain to Source Resistance (on) (Rds) | 200 mΩ |
| Polarity | N-Channel |
| Power Dissipation | 60.0 W |
| Drain to Source Voltage (Vds) | 100 V |
| Breakdown Voltage (Drain to Source) | 100 V |
| Breakdown Voltage (Gate to Source) | -10.0 V to 10.0 V |
| Continuous Drain Current (Ids) | 12.0 A |
| TYPE | DESCRIPTION |
|---|
| Product Lifecycle Status | Not Listed by Manufacturer |
| Packaging | Tube |
The RFP12N10L is a 100V N-channel logic level enhancement mode power MOSFET designed for logic level 5V driving sources in applications such as programmable controllers, automotive switching and solenoid drivers. This performance is accomplished through a special gate oxide design which provides full rated conduction at gate biases in the 3 to 5V range, thereby facilitating true on-off power control directly from logic circuit supply voltages. This product is general usage and suitable for many different applications.
● Compatible with automotive drive requirements
● Can be driven directly from QMOS, NMOS and TTL circuits
● High input impedance
● Nanosecond switching speed
● Linear transfer characteristics
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6 Pages / 0.59 MByte
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Trans MOSFET N-CH 100V 12A 3Pin(3+Tab) TO-220AB Rail
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