| TYPE | DESCRIPTION |
|---|
| Mounting Style | Surface Mount |
| Number of Pins | 3 Pin |
| Voltage Rating (DC) | 60.0 V |
| Current Rating | 11.0 A |
| Case/Package | TO-252 |
| Drain to Source Resistance (on) (Rds) | 107 mΩ |
| Polarity | N-Channel |
| Power Dissipation | 38.0 W |
| Input Capacitance | 350 pF |
| Gate Charge | 9.40 nC |
| Drain to Source Voltage (Vds) | 60.0 V |
| Breakdown Voltage (Drain to Source) | 60.0 V |
| Breakdown Voltage (Gate to Source) | -16.0 V to 16.0 V |
| Continuous Drain Current (Ids) | 11.0 A, 11.0 mA |
| Rise Time | 105 ns |
| TYPE | DESCRIPTION |
|---|
| Product Lifecycle Status | Active |
| Packaging | Cut Tape (CT) |
The RFD3055LESM9A is a N-channel enhancement-mode Power MOSFETs manufactured using the latest manufacturing process technology. This process, which uses feature sizes approaching those of LSI circuits, gives optimum utilization of silicon, resulting in outstanding performance. It is designed for use in applications such as switching regulators, switching converters and relay drivers. It can be operated directly from integrated circuits.
● Temperature compensating PSPICE® model
● Peak current vs. pulse width curve
● UIS Rating curve
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