| TYPE | DESCRIPTION |
|---|
| Mounting Style | Surface Mount |
| Voltage Rating (DC) | 60.0 V |
| Current Rating | 11.0 A |
| Case/Package | TO-252/D-PAK |
| Drain to Source Resistance (on) (Rds) | 107 mΩ |
| Polarity | N-Channel |
| Power Dissipation | 38.0 W |
| Input Capacitance | 350 pF |
| Gate Charge | 9.40 nC |
| Drain to Source Voltage (Vds) | 60.0 V |
| Breakdown Voltage (Drain to Source) | 60.0 V |
| Breakdown Voltage (Gate to Source) | -16.0 V to 16.0 V |
| Continuous Drain Current (Ids) | 11.0 A |
| Rise Time | 105 ns |
| TYPE | DESCRIPTION |
|---|
| Product Lifecycle Status | Not Listed by Manufacturer |
| Packaging | Bulk |
11A, 60V, 0.107 Ohm, Logic Level, N-Channel Power MOSFETs These N-Channel enhancement-mode power MOSFETs are manufactured using the latest manufacturing process technology. This process, which uses feature sizes approaching those of LSI circuits, gives optimum utilization of silicon, resulting in outstanding performance. They were designed for use in applications such as switching regulators, switching converters, motor drivers and relay drivers. These transistors can be operated directly from integrated circuits. Features • 11A, 60V • rDS(ON) = 0.107Ω • Temperature Compensating PSPICE Model • Peak Current vs Pulse Width Curve • UIS Rating Curve • Related Literature TB334 “Guidelines for Soldering Surface Mount Components to PC Boards
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