| TYPE | DESCRIPTION |
|---|
| Number of Pins | 6 Pin |
| Case/Package | SOT-666 |
| Polarity | Dual N-Channel |
| Drain to Source Voltage (Vds) | 20V |
| Continuous Drain Current (Ids) | 0.8A |
| TYPE | DESCRIPTION |
|---|
| Product Lifecycle Status | Not Listed by Manufacturer |
The PMDT290UNE is a dual N-channel enhancement-mode FET in an ultra small and flat lead surface-mount plastic package using Trench MOSFET technology. It is suitable for relay driver, high-speed line driver, low-side load-switch and switching circuit applications.
● Very fast switching characteristics
● ESD protection up to 2kV
NXP
SOT-666 N+P 20V 0.8A/0.55A
Nexperia USA
MOSFET 2N-CH 20V 0.8A SOT666
NXP
SOT-666 N+P 20V 0.8A/0.55A
NXP
Trans MOSFET N-CH 20V 0.8A 6Pin SOT-666 T/R
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