| TYPE | DESCRIPTION |
|---|
| Number of Pins | 3 Pin |
| Case/Package | SOT-23 |
| Polarity | NPN |
| Power Dissipation | 300 mW |
| Breakdown Voltage (Collector to Emitter) | 50V |
| Continuous Collector Current | 2A |
| TYPE | DESCRIPTION |
|---|
| Product Lifecycle Status | Not Listed by Manufacturer |
| Packaging | Cut Tape (CT) |
The PBSS4350T is a 3A NPN breakthrough-in small signal (BISS) Transistor housed in a surface-mount plastic package.
● Low collector-emitter saturation voltage VCEsat and corresponding low RCEsat
● High collector current capability
● High collector current gain
● Improved efficiency due to reduced heat generation
● PNP complement is PBSS5350T
● ZC Marking code
Philips
50V low VCEsat NPN transistor
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