TYPE | DESCRIPTION |
---|
Number of Pins | 3 Pin |
Case/Package | SOT-89 |
Polarity | NPN |
Power Dissipation | 550 mW |
Breakdown Voltage (Collector to Emitter) | 50V |
Continuous Collector Current | 2A |
TYPE | DESCRIPTION |
---|
Product Lifecycle Status | Not Listed by Manufacturer |
Packaging | Cut Tape (CT) |
The PBSS4250X is a 2A NPN breakthrough-in small signal (BISS) Transistor in a plastic package. It offers die pad for good heat transfer.
● Low collector-emitter saturation voltage VCEsat
● High collector current capability: IC and ICM
● Higher efficiency leading to less heat generation
● Reduced printed-circuit board requirements
● PNP complement is PBSS5250X
Philips
50V, 2A NPN low VCEsat (BISS) transistor
NXP
Bipolar Transistors - BJT NPN 50V 2A
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