TYPE | DESCRIPTION |
---|
Mounting Style | Surface Mount |
Case/Package | SOT-223/SC-73 |
Polarity | NPN |
Breakdown Voltage (Collector to Emitter) | 100V |
Continuous Collector Current | 5.1A |
TYPE | DESCRIPTION |
---|
Product Lifecycle Status | Not Listed by Manufacturer |
100 V, 5.1 A NPN low VCEsat (BISS) transistor General description NPN low VCEsat Breakthrough In Small Signal (BISS) transistor in a SOT223 (SC-73) small Surface-Mounted Device (SMD) plastic package. PNP complement: PBSS306PZ. Features Low collector-emitter saturation voltage VCEsat High collector current capability IC and ICM High collector current gain (hFE) at high IC High efficiency due to less heat generation Smaller required Printed-Circuit Board (PCB) area than for conventional transistors Applications High-voltage DC-to-DC conversion High-voltage MOSFET gate driving High-voltage motor control High-voltage power switches (e.g. motors, fans) Automotive applications
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