| TYPE | DESCRIPTION |
|---|
| Mounting Style | Surface Mount |
| Number of Pins | 3 Pin |
| Voltage Rating (DC) | -8.00 V |
| Current Rating | -1.40 A |
| Case/Package | SOT-323 |
| Drain to Source Resistance (on) (Rds) | 117 mΩ |
| Polarity | P-Channel |
| Power Dissipation | 290 mW |
| Drain to Source Voltage (Vds) | -8.00 V |
| Breakdown Voltage (Gate to Source) | -8.00 V to 8.00 V |
| Continuous Drain Current (Ids) | 1.40 A |
| TYPE | DESCRIPTION |
|---|
| Product Lifecycle Status | Active |
| Packaging | Cut Tape (CT) |
The NTS2101PT1G is a P-channel Power MOSFET offers -8V drain source voltage and -1.4A continuous drain current. It is suitable for high side load switch, charging circuit, single cell battery applications such as cell phones, digital cameras and PDAs.
● Leading Trench technology for low RDS (ON) extending battery life
● -1.8V Rated for low voltage gate drive
● Surface-mount for small footprint (2 x 2mm)
● -55 to 150°C Operating junction temperature range
ON Semiconductor
5 Pages / 0.05 MByte
ON Semiconductor
7 Pages / 0.1 MByte
ON Semiconductor
1 Pages / 0.15 MByte
Part Datasheet PDF Search
72,405,303 Parts Datasheet PDF, Update more than 5,000 PDF files ervery day.
