| TYPE | DESCRIPTION |
|---|
| Mounting Style | Surface Mount |
| Number of Pins | 3 Pin |
| Voltage Rating (DC) | -20.0 V |
| Current Rating | -3.20 A |
| Case/Package | SOT-23 |
| Drain to Source Resistance (on) (Rds) | 112 mΩ |
| Polarity | P-Channel |
| Power Dissipation | 730 mW |
| Drain to Source Voltage (Vds) | -20.0 V |
| Breakdown Voltage (Gate to Source) | -8.00 V to 8.00 V |
| Continuous Drain Current (Ids) | 3.20 A, -3.20 A |
| TYPE | DESCRIPTION |
|---|
| Product Lifecycle Status | Active |
| Packaging | Tape & Reel (TR), Cut Tape (CT) |
The NTR4101PT1G is a P-channel Trench Power MOSFET offers -20V drain source voltage and -2.4A continuous drain current. It is suitable for charging circuits and battery protection, load management for portables and computing applications.
● Leading -20V Trench for low RDS (ON)
● -1.8V Rated for low voltage gate drive
● Surface-mount for small footprint
● Halogen-free
● -55 to 150°C Operating junction temperature range
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